02 // Knowledge

Three mechanisms.
One environment.

Spacecraft and satellites face galactic cosmic rays, solar particle events, and Van Allen belt protons. Each imposes a distinct degradation pathway on silicon. ARC characterises all three.

SampleDIE BS-12
Fluence1.2 × 10¹¹ p/cm²
StatusUnder observation
01 // SEE

Single Event Effects

A single high-energy particle strike induces an instantaneous, often destructive event in a semiconductor.

SEU
Single Event Upset — bit flip in memory or logic
SEL
Single Event Latch-up — destructive parasitic latch
SEB / SEGR
Burnout / gate rupture in power devices
SET
Transient propagated through combinational logic
02 // TID

Total Ionizing Dose

Cumulative ionizing radiation gradually shifts device parameters — threshold voltages drift, leakage rises, gain collapses.

Threshold Drift
Vth shift in MOSFETs
Leakage
Increased static current draw
Gain Loss
Bipolar β degradation
Failure
Functional failure at end-of-life dose
03 // DDD

Displacement Damage

Non-ionizing energy loss displaces atoms in the crystal lattice, degrading optoelectronics and solar cells.

Solar Cells
Reduced power conversion efficiency
Optocouplers
CTR degradation
Image Sensors
Increased dark current, hot pixels
BJTs
Minority carrier lifetime collapse

Test against the actual environment, before launch.

Plan a Test Campaign